No.

Article Title

Authors

Journal

Vol.

Page

Yr.

1

X - ray characterization of Ag impurities in  Na_1-xAg_xCl

N. Hazeen

K. S. Syed Ali

M. Prema Rani

R. Saravanan

Defetcs & Diffusion Forum  (DDF)

(Trans Tech Pub.)

(Book title: Defects and Diffusion in Metals—An Annual  Retrospective X)

 278

33-44 

2008

2

X-ray Determination of Charge Transfer in Solar Grade GaAs

R. Saravanan

S. Jainulabdeen

N. Srinivasan

Y. B. Kannan

J. Phys. Chem. Solids

(Elsevier)

69

83-86

2008

3

Electron density distribution in Si and Ge using multipole, maximum entropy method and pair distribution function analysis,

R.Saravanan

K S Syed Ali

S Israel,

Pramana

(Indian Academy

of Sciences)

70

(4)

679-696

 2008

4

Non-nuclear maxima (NNM), symmetric and asymmetric charge distribution in solar grade Si and n-GaAs, using X-ray powder data

R. Saravanan

A.Majella Mary Ann S. Jainulabdeen

Physica B

(Elsevier)

B400

16-21

2007

5

Maximum entropy method and multipole analysis of the bonding in sodium and vanadium metals

R. Saravanan

M. Prema Rani

J. Phys.:

Condens. Matter

(Institute of

Physics – IOP)

19

266221

2007

6

Bonding in CoAl and NiAl metal alloys using multipole and MEM techniques

R. Saravanan

M. Prema Rani

J. Alloys

and Compounds

(Elsevier)

431

121-129

2007

7

Application of Maximum Entropy Method for the Study of Electron Density Distribution in SrS, PuS, CaS, MnS and HgS using Powder X-ray data.

R. Saravanan

Pramana

(Indian Academy

of Sciences)

66

(6)

1057-1065

2006

8

Electron density distribution and bonding in ZnSe and PbSe using maximum entropy method (MEM)

K. S. Syed Ali

R. Saravanan

S.Israel

R.K.Rajaram

Bulletin of

Materials Science

(Indian Academy

of Sciences)

9

(2)

107-114

2006

9

Probabilistic electron density distribution in CdTe at RT and 200K

R. Saravanan

S. Israel

Y. Ono

K. Ohno

M. Isshiki

T. Kajitani

R. K. Rajaram

Crystal

Research

and Technology

(Wiley InterScience)

41

(3)

259 – 267

2006

10

Optical, thermal and phase transition studies in Sn_1–xGe_xTe

M. Sivabharathy

N.Sankar

R. Saravanan

K. Ramachandran

Bulletin of

Materials Science

(Indian Academy

of Sciences)

28

(7)

675–679

2005

11

Bonding in ZnTe at RT, 200 and 100 K Revealed by Entropy Maximized Electron Density Distribution

R. Saravanan

S. Israel

R. K. Rajaram

Physica B

(Elsevier)

B363

(1-4)

166-177

2005

12

Bonding in Fluorite Compound CaF₂ Using MEM.

R. Saravanan

S. Israel.

Physica B

(Elsevier)

B352

(1-4)

220-226

2004

13

Electronic Structure of InP at RT, 200K and 100K.

S. Israel

R. Saravanan

R.K. Rajaram. 

Physica B

(Elsevier)

B349

390-400

2004

14

Determination of Experimental X-ray Anomalous Dispersion Correction Term f” of Tellurium in CdTe at 200 K and 300 K

R. Saravanan

B. Revathy

Salsearch

(Private)

36-52

2004

15

An investigation on the bonding in MgO, CaO, SrO and BaO from the MEM electron density distributions

S. Israel

R . Saravanan

N. Srinivasan

S.K. Mohanlal

J. Phys. Chem. Solids

(Elsevier)

64

879-886

2003

16

Charge transfer in CdTe at 200 K and 300

K.K.Balamurugan R.Saravanan

K. Asharamani

P. Manimaran

S.Mariyappan

N.Srinivasan

Y. Ono

M.Isshiki

T. Kajitani

Journal of

Crystal Growth

(Elsevier)

250

382-392

2003

17

Electron density distribution in GaAs using MEM

R.Saravanan

Y. Ono

M.Isshiki

K.Ohno

T. Kajitani

J. Phys. Chem. Solids

(Elsevier)

64

51–58

2003

18

High resolution electron density mapping for LiF and  NaF by maximum entropy method (MEM)

S. Israel

R.Saravanan

N. Srinivasan

R.K. Rajaram

J. Phys. Chem. Solids

(Elsevier)

64

43–49

2003

19

Gel Growth and X-ray Characterization of Ferro Electric Single Crystals of SrHPO₄ and PbHPO₄

K.S. Syed Ali

N.Ajeetha

R.Saravanan

Bulletin of

Pure and

Applied

Sciences

D: Physics

21

(2)

151-157

2002

20

Electronic Charge Distribution in the Intermetallic Compound MnHg

R. Saravanan

S.Israel

S. Swaminathan

R. Kalidos

M. Muruganantham

Crystal Research and Technology

(Wiley InterScience)

37

(12)

,1310-1317

2002

21

Experimental f” of As at 170, 200, 250 and 300 K from the Bijvoet pairs of GaAs

G. Raja Sudha

K. Vimala Devi

D.Arthi

S.Prasanna Subramanian

N. Srinivasan

R. Saravanan

Bulletin of

Materials Science

(Indian Academy of Sciences)

25

(4)

325-327

2002

22

Raman Study on H+ - implantation effects in highly doped n-GaAs

P. Murugan, R. Kesavamoorthy, S. Amirthapandiana, R. Saravanan, K .Ramachandran, N. Krishnamurthy

Physica B

(Elsevier)

B315

56

2002

23

High resolution electron density distribution determination for GaAs and CdTe

T. Kajitani

R. Saravanan

Y. Ono

K. Ohno

M. Isshiki

Journal of

Crystal Growth

(Elsevier)

229

130-136

2001